RoHS

yes

Mount

Pbfree

icon-pbfree yes

Series

FET Type

ECCN Code

EAR99

Inventory

12324

Lead Free

Packaging

Pin Count

8

Published

Rise Time

Vgs (Max)

REACH SVHC

Resistance

Technology

Nominal Vgs

Part Status

RoHS Status

RoHS Compliant

Subcategory

Termination

Halogen Free

JESD-30 Code

R-PDSO-G8

Configuration

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code

JESD-609 Code

e3

Mounting Type

Surface Mount

YES

Terminal Form

GULL WING

Current Rating

FET Technology

METAL-OXIDE SEMICONDUCTOR

Number of Pins

Operating Mode

ENHANCEMENT MODE

Package / Case

Contact Plating

Fall Time (Typ)

Terminal Finish

Tin (Sn)

Factory Lead Time

Power Dissipation

Terminal Position

DUAL

Threshold Voltage

Additional Feature

Number of Elements

1

Turn On Delay Time

Vgs(th) (Max) @ Id

Voltage - Rated DC

Dual Supply Voltage

Number of Terminals

8

Turn-Off Delay Time

Qualification Status

Not Qualified

Operating Temperature

Polarity/Channel Type

P-CHANNEL

Power Dissipation-Max

Reach Compliance Code

compliant

Number of Terminations

Rds On (Max) @ Id, Vgs

Transistor Application

Feedback Cap-Max (Crss)

Max Dual Supply Voltage

DS Breakdown Voltage-Min

20V

Operating Temperature (Max)

150°C

Transistor Element Material

SILICON

Drain Current-Max (Abs) (ID)

9.3A

Gate Charge (Qg) (Max) @ Vgs

Gate to Source Voltage (Vgs)

Avalanche Energy Rating (Eas)

248 mJ

Continuous Drain Current (ID)

Peak Reflow Temperature (Cel)

NOTSPECIFIED

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

0.008Ohm

Pulsed Drain Current-Max (IDM)

59.6A

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Drain to Source Breakdown Voltage

Input Capacitance (Ciss) (Max) @ Vds

Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

Drive Voltage (Max Rds On,Min Rds On)

Current - Continuous Drain (Id) @ 25°C